Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001) - Archive ouverte HAL
Article Dans Une Revue Nanotechnology Année : 2006

Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001)

Résumé

Lowdensity InAs/InP(001) quantum dots, formed by the ripening of self-organized quantum sticks, are subjected to optical spectroscopy by photoluminescence and micro-photoluminescence. The presence of neutral multi-exciton states in single quantum dots is observed up to the 4X state. The large energy spacing between the s- and p-shells (90 meV) reveals the strong spatial confinement of carriers in such InAs/InP quantum dots. Micro-photoluminescence studies show that some dots are charged which allows us to measure the exchange energies in the InAs/InP quantum dots.

Dates et versions

hal-01902515 , version 1 (23-10-2018)

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Citer

Nicolas Chauvin, E. Tranvouez, G. Bremond, G. Guillot, C. Bru-Chevallier, et al.. Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001). Nanotechnology, 2006, 17 (8), pp.1831-1834. ⟨10.1088/0957-4484/17/8/004⟩. ⟨hal-01902515⟩
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