Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2010

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hal-01901770 , version 1 (23-10-2018)

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H. Khmissi, L. Sfaxi, L. Bouzaïene, F. Saidi, H. Maaref, et al.. Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction. Journal of Applied Physics, 2010, 107 (7), ⟨10.1063/1.3371356⟩. ⟨hal-01901770⟩
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