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Article Dans Une Revue Applied Physics Letters Année : 2010

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

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hal-01901750 , version 1 (23-10-2018)

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W. Chikhaoui, J.-M. Bluet, M.-A. Poisson, N. Sarazin, C. Dua, et al.. Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage. Applied Physics Letters, 2010, 96 (7), ⟨10.1063/1.3326079⟩. ⟨hal-01901750⟩
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