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Article Dans Une Revue Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Année : 2009

Step bunching to step-meandering transition induced by electromigration on Si(111) vicinal surface

F. Leroy
D. Karashanova
  • Fonction : Auteur
T. Frisch
  • Fonction : Auteur
J.-J. Métois
  • Fonction : Auteur
P. Müller
  • Fonction : Auteur

Résumé

The step conguration of a vicinal Si surface is studied under electromigration and a gradient of temperature. An abrupt transition (∆T = 4C) from step-meandering to step-bunching is found at 1225 C for a step-down direct-current direction. This phase transition starts by local inhomogeneities which then extend on the whole surface. The transition is studied in the framework of a linear stability analysis of the usual Burton-Cabrera-Frank model by comparing the amplication factors of step-meandering and step-bunching instabilities. Both compete at a given temperature, but since the amplication factors behave dierently with temperature, bunching abruptly supersedes meandering above a critical temperature.

Dates et versions

hal-01900752 , version 1 (22-10-2018)

Identifiants

Citer

F. Leroy, D. Karashanova, M. Dufay, J.-M. Debierre, T. Frisch, et al.. Step bunching to step-meandering transition induced by electromigration on Si(111) vicinal surface. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2009, 603 (3), pp.507 - 512. ⟨10.1016/j.susc.2008.12.016⟩. ⟨hal-01900752⟩
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