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Journal Articles Journal of Physics: Condensed Matter Year : 2001

Many-body effects in the electronic structure of Sn/Si(111)-α-√ 3

Abstract

The unoccupied electronic structure of the model interface Sn/Si(111)-α-√ 3 has been measured at room temperature (RT) using angle-resolved inverse photoemission spectroscopy (KRIPES). In addition to a partly occupied surface band crossing the Fermi level, there is a second unoccupied surface state located 1.5 eV above E F ; the existence of these two surface states is not compatible with the single adatom site used to describe the α-√ 3 reconstruction. These surface states receive a natural explanation, once many-body effects are introduced, in the framework of a dynamical fluctuations model, where two types of adatom site, reminiscent of a possible low-temperature (3 × 3) phase, coexist at RT.
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Dates and versions

hal-01900000 , version 1 (02-02-2019)

Identifiers

  • HAL Id : hal-01900000 , version 1

Cite

Anne Charrier, R Pérez, F. Thibaudau, J-M Debever, J. Ortega, et al.. Many-body effects in the electronic structure of Sn/Si(111)-α-√ 3. Journal of Physics: Condensed Matter, 2001. ⟨hal-01900000⟩
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