USE OF AMORPHOUS HYDROGENATED SILICON CARBIDE AS A REAR-SIDE PASSIVATION LAYER FOR CRYSTALLINE SILICON SOLAR CELLS
Résumé
a-SiC x :H is a material which could be used as a passivating layer for a crystalline silicon solar cell with a minimum surface recombination velocity of 7.5 cm.s-1. The thermal stability should also be considered. As the Si-richest a-SiC x :H films are the less stable one, carbon-richer stoichiometry are preferred. From C(V) measurements, the interface between a-SiC x :H and c-Si seems to be in accumulation regime. In presence of local aluminium contacts, it means that a BSF on the whole rear side is established making the use of a-SiC x :H interesting for the rear-side passivation. For the PERC solar cells, two stoichiometries [C] = 0.15 and [C] = 0.24 are chosen because they are more thermally stable than Si-richest films and they ensure good surface passivation. An additional layer of SiN x :H at the rear side improves the internal reflection. We compare also results obtained with solar cells schemes with and without thin layer of oxide at the front-side.
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