V TH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude reducing as the temperature increases, whereas all trench devices from different manufacturers exhibit the opposite behaviour. A physical interpretation is proposed, based on experimental evidence, which demonstrates that temperature dependence of the V TH subthreshold hysteresis is related to the technology. The findings are relevant to the ongoing discussion on SiC bespoke validation standards development and contribute important new insight.