Article Dans Une Revue Physica B: Condensed Matter Année : 2000

Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces

Résumé

Twist-bonded Si/Si (0 0 1) and Si/SiO2 interfaces have been investigated by grazing incidence X-ray scattering methods. For Si/Si (0 0 1) bonding, conventional X-ray reflectivity reveals the good quality of the interfaces in terms of flatness and roughness. In-plane grazing incidence diffraction measurements around the (2 2 0) reflection show satellite peaks close to the substrate and the layer diffraction peaks. These sharp satellites are produced by a periodic displacement resulting from a very regular buried dislocation network. The Si/SiO2 bonding has been studied with X-ray reflectivity within a transmission geometry. The analysis of the data shows the high quality of both bonded Si/SiO2 and thermal oxide SiO2/Si interfaces.

Dates et versions

hal-01876874 , version 1 (19-09-2018)

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Citer

D. Buttard, J. Eymery, F. Rieutord, F. Fournel, D Lübbert, et al.. Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces. Physica B: Condensed Matter, 2000, 283 (1-3), pp.103 - 107. ⟨10.1016/S0921-4526(99)01900-6⟩. ⟨hal-01876874⟩
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