Gate-Controlled Spin Injection at LaAlO3 / SrTiO3 Interfaces

We report results of electrical spin injection at the high-mobility quasi-two-dimensional electron system (2-DES) that forms at the LaAlO 3 =SrTiO 3 interface. In a nonlocal, three-terminal measurement geometry, we analyze the voltage variation associated with the precession of the injected spin accumulation driven by perpendicular or transverse magnetic fields (Hanle and inverted Hanle effect). The influence of bias and back-gate voltages reveals that the spin accumulation signal is amplified by resonant tunneling through localized states in the LaAlO 3 strongly coupled to the 2-DES by tunneling transfer.

Domaines

Science des matériaux [cond-mat.mtrl-sci] Autre [cond-mat.other]

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Reyren_GateControlledSpinInjectionAtTheLAO-STOinterfaces_PhysRevLett.108.186802.pdf (883.5 Ko)

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https://hal.science/hal-01876797

Soumis le : mardi 18 septembre 2018-18:56:35

Dernière modification le : jeudi 11 avril 2024-13:18:11

Dates et versions

hal-01876797 , version 1 (18-09-2018)

Identifiants

HAL Id : hal-01876797 , version 1
DOI : 10.1103/PhysRevLett.108.186802

Citer

N. Reyren, M. Bibes, E. Lesne, J.-M. George, C. Deranlot, et al.. Gate-Controlled Spin Injection at LaAlO3 / SrTiO3 Interfaces. Physical Review Letters, 2012, 108 (18), pp.186802. ⟨10.1103/PhysRevLett.108.186802⟩. ⟨hal-01876797⟩

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