A novel 2-step ALD route to ultra-thin Mo$S_{2}$ films on Si$O_{2}$ through a surface organometallic intermediate - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nanoscale Année : 2017

A novel 2-step ALD route to ultra-thin Mo$S_{2}$ films on Si$O_{2}$ through a surface organometallic intermediate

Résumé

The lack of scalable-methods for the growth of 2D Mo$S_{2}$ crystals, an identified emerging material with applications ranging from electronics to energy storage, is a current bottleneck against its large-scale deployment. We report here a two-step ALD route with new organometallic precursors, Mo(N$Me_{2}$$)_{4}$ and 1,2-ethanedithiol (HS($CH_{2}$$)_{2}SH$) which consists in the layer-by-layer deposition of an amorphous surface Mo(IV) thiolate at 50 °C, followed by a subsequent annealing at higher temperature leading to ultra-thin Mo$S_{2}$ nanocrystals (∼20 nm-large) in the 1–2 monolayer range. In contrast to the usual high-temperature growth of 2D dichalcogenides, where nucleation is the key parameter to control both thickness and uniformity, our novel two-step ALD approach enables chemical control over these two parameters, the growth of 2D Mo$S_{2}$ crystals upon annealing being ensured by spatial confinement and facilitated by the formation of a buffer oxysulfide interlayer.

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Chimie
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Dates et versions

hal-01872867 , version 1 (12-09-2018)

Identifiants

Citer

Stéphane Cadot, Olivier Renault, Mathieu Frégnaux, Denis Rouchon, Emmanuel Nolot, et al.. A novel 2-step ALD route to ultra-thin Mo$S_{2}$ films on Si$O_{2}$ through a surface organometallic intermediate. Nanoscale, 2017, 9 (2), pp.538--546. ⟨10.1039/c6nr06021h⟩. ⟨hal-01872867⟩
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