Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications - Archive ouverte HAL
Poster De Conférence Année : 2018

Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications

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Physique [physics] Matière Condensée [cond-mat] Science des matériaux [cond-mat.mtrl-sci]

Simon Charbonnier  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01866135

Soumis le : lundi 3 septembre 2018-09:37:30

Dernière modification le : lundi 16 septembre 2024-17:52:04

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Dates et versions

hal-01866135 , version 1 (03-09-2018)

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  • HAL Id : hal-01866135 , version 1

Citer

Simon Charbonnier, Ida Lucci, Subhashis Gangopadhyay, Yanping Wang, Tony Rohel, et al.. Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications . European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018. ⟨hal-01866135⟩

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