SiC lateral Schottky diode technology for integrated smart power converter

Ampere laboratory develops a technology of lateral power integrated circuit in Silicon Carbide (SiC). The purpose is to establish integrated power converter with its driver, which can operate in harsh environment. The technology is namely consisted by lateral MESFETs and lateral diodes. This paper presents two types of manufactured diodes: rectifier Schottky diode and power Schottky diode.

Mots clés

electrical characteristics SiC power converter Schottky diode

Domaines

Energie électrique

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cgri65.pdf (670.56 Ko)

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https://hal.science/hal-01864545

Soumis le : jeudi 9 mai 2019-13:26:18

Dernière modification le : mardi 21 novembre 2023-09:26:56

Archivage à long terme le : mardi 1 octobre 2019-21:49:49

Dates et versions

hal-01864545 , version 1 (09-05-2019)

Identifiants

HAL Id : hal-01864545 , version 1
DOI : 10.1109/ICIT.2018.8352287

Citer

Jean-François Mogniotte, Christophe Raynaud, Mihai Lazar, Bruno Allard, Dominique Planson. SiC lateral Schottky diode technology for integrated smart power converter. 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩. ⟨hal-01864545⟩

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