Mid-IR laser diodes epitaxially grown by Molecular Beam epitaxy on silicon substrates - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2012

Mid-IR laser diodes epitaxially grown by Molecular Beam epitaxy on silicon substrates

Domaines

Electronique
Fichier non déposé

Dates et versions

hal-01861063 , version 1 (24-08-2018)

Identifiants

  • HAL Id : hal-01861063 , version 1

Citer

J.-B. Rodriguez, L. Cerutti, J. R. Reboul, E. Tournié. Mid-IR laser diodes epitaxially grown by Molecular Beam epitaxy on silicon substrates. 11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States. ⟨hal-01861063⟩
29 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More