Fabrication, characterization and simulation of MBE-grown GaAs-based tunnel diodes with type I and type II heterojunctions for multijunction solar cells - Archive ouverte HAL
Poster De Conférence Année : 2016

Fabrication, characterization and simulation of MBE-grown GaAs-based tunnel diodes with type I and type II heterojunctions for multijunction solar cells

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Optique / photonique Matériaux

Guilhem Almuneau  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01857639

Soumis le : jeudi 16 août 2018-17:41:13

Dernière modification le : mardi 3 septembre 2024-11:16:05

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hal-01857639 , version 1 (16-08-2018)

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  • HAL Id : hal-01857639 , version 1

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Kevin Louarn, Chantal Fontaine, Alexandre Arnoult, François Olivie, Guy Lacoste, et al.. Fabrication, characterization and simulation of MBE-grown GaAs-based tunnel diodes with type I and type II heterojunctions for multijunction solar cells. 19th International Conference on Molecular Beam Epitaxy (MBE 2016), Sep 2016, Montpellier, France. 2p., 2016. ⟨hal-01857639⟩

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