Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations
Résumé
This work presents the impact analysis of physical and geometrical parameters on the on-resistance and the breakdown voltage in order to optimize a 600 V pseudo-vertical GaN/Si Schottky rectifier. The results by finite element simulations indicate that the most influent parameter on the resistance is the thickness of the n+ layer. Regarding reverse specifications, simulations show that a good efficiency of the “Mesa + Guard Ring” is achieved for a guard ring doping concentration higher than Na=5×1017 cm-3.
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