In Situ Imaging of Dislocation Expansion in FZ-Si Seeds During Temperature Ramp Heating Process - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue physica status solidi (a) Année : 2018

In Situ Imaging of Dislocation Expansion in FZ-Si Seeds During Temperature Ramp Heating Process

Résumé

The impact of the thermal field in a directional solidification furnace on the generation and propagation of dislocations is investigated in intrinsic floating zone single crystal silicon. Seeds with different crystallographic orientations are wire-cut from mono-crystalline wafers and dislocation sources are solely left at the edges. Thermal annealing experiments are carried out in situ at the European synchrotron radiation facility and the evolution of the silicon crystalline quality is studied by X-ray diffraction imaging technique. At 1073 K, dislocations nucleate only at the edges and their strain field remains local. At higher temperature (1373 K), dislocations propagate throughout the entire width of the seed via the preferential activation of slip planes, related to the crystallographic orientation of the seed. These results confirm the high importance of seed preparation in mono – like silicon growth process. and chemical polishing of all seed surfaces, including their edges, are mandatory to prevent dislocation expansion and multiplication.
Fichier principal
Vignette du fichier
pssa.201700758_R3_HAL.pdf (1.65 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-01850348 , version 1 (27-07-2018)

Identifiants

Citer

Maria G. Tsoutsouva, Thècle Riberi-Béridot, Gabrielle Regula, Guillaume Reinhart, Jose Baruchel, et al.. In Situ Imaging of Dislocation Expansion in FZ-Si Seeds During Temperature Ramp Heating Process. physica status solidi (a), 2018, 215 (14), pp.1700758. ⟨10.1002/pssa.201700758⟩. ⟨hal-01850348⟩
104 Consultations
134 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More