Growth of Ge islands on SrTiO3 (001) 2×1 reconstructed surface: Epitaxial relationship and effect of the temperature - Archive ouverte HAL
Article Dans Une Revue Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Année : 2014

Growth of Ge islands on SrTiO3 (001) 2×1 reconstructed surface: Epitaxial relationship and effect of the temperature

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hal-01848769 , version 1 (25-07-2018)

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B. Gobaut, J. Penuelas, A. Benamrouche, Y. Robach, N. Blanc, et al.. Growth of Ge islands on SrTiO3 (001) 2×1 reconstructed surface: Epitaxial relationship and effect of the temperature. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2014, 624, pp.130 - 134. ⟨10.1016/j.susc.2014.02.009⟩. ⟨hal-01848769⟩
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