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Article Dans Une Revue EPE Journal - European Power Electronics and Drives Année : 2018

SiC MOSFETs robustness for diode-less applications

Résumé

Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterised. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.
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Dates et versions

hal-01844980 , version 1 (19-07-2018)

Identifiants

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Oriol Aviño Salvado, C. Cheng, Cyril Buttay, Hervé Morel, D Labrousse, et al.. SiC MOSFETs robustness for diode-less applications. EPE Journal - European Power Electronics and Drives, 2018, pp.1 - 8. ⟨10.1080/09398368.2018.1456836⟩. ⟨hal-01844980⟩
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