3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates - Archive ouverte HAL
Communication Dans Un Congrès Année : 2008

3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates

Résumé

The bipolar amplification and charge collection of Planar Double-Gate and FinFET with independent gates is simulated. The transient response of independent gate devices is compared to that of conventional devices having the gates tied together.
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Dates et versions

hal-01841105 , version 1 (17-07-2018)

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Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau. 3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates. Conference on Radiation Effects on Components and Systems (RADECS), Sep 2008, Jyväskylä, Finland. pp.280-283, ⟨10.1109/RADECS.2008.5782727⟩. ⟨hal-01841105⟩
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