Strain state and chemical arrangement at interfaces of InAs/AlSb quantum wells - Archive ouverte HAL
Communication Dans Un Congrès Année : 2010

Strain state and chemical arrangement at interfaces of InAs/AlSb quantum wells

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Electronique
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Dates et versions

hal-01831089 , version 1 (05-07-2018)

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  • HAL Id : hal-01831089 , version 1

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Christophe Gatel, Bénédicte Warot-Fonrose, C. Magen, R. Ibarra, R. Teissier, et al.. Strain state and chemical arrangement at interfaces of InAs/AlSb quantum wells. IMC 17, 2010, Rio de Janeiro, Brazil. ⟨hal-01831089⟩
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