Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach
Résumé
A new self-consistent quantum simulator based on the Monte Carlo solution of Wigner transport equation is used to analyze the operation of 6 nm-long DG-MOSFETs. By comparison with other simulation approaches, the work emphasizes the important role of scattering and quantum effects on the electrical characteristics of such nano-devices. The results are confronted to ITRS specifications and the various effects of aggressive oxide thickness thinning on device performance are discussed.
Domaines
Sciences de l'ingénieur [physics]Origine | Fichiers produits par l'(les) auteur(s) |
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