GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy

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Electronique
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Dates et versions

hal-01826633 , version 1 (29-06-2018)

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  • HAL Id : hal-01826633 , version 1

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L. Cerutti, A. Ducanchez, G. Narcy, P. Grech, G. Boissier, et al.. GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy. 15th Int. Conf. on Molecular-Beam Epitaxy (MBE-15), 2009, Vancouver, Canada. ⟨hal-01826633⟩
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