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Communication Dans Un Congrès Année : 2012

A Thermal Annealing Approach to Extend Metal Oxide Semiconductor Devices Lifetime Exposed to Very High Dose Levels

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Electronique
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Dates et versions

hal-01824395 , version 1 (27-06-2018)

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  • HAL Id : hal-01824395 , version 1

Citer

F. Roig, L. Dusseau, J. Boch, Frédéric Saigné, J.-R. Vaillé, et al.. A Thermal Annealing Approach to Extend Metal Oxide Semiconductor Devices Lifetime Exposed to Very High Dose Levels. IEEE RADECS 2012, 2012, Biarritz, France. ⟨hal-01824395⟩
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