Diffuse phase transition of BST thin films in the microwave domain
Résumé
Ferroelectric materials are widely used in the paraelectric phase in order to realize tunable capacitors with reduced losses and low hysteresis effect. Nevertheless, for polycrystalline thin films, the ferro/paraelectric phase transition can be diffuse and some crystallites can exhibit a ferroelectric nature even if the sample seem to be globally in a paraelectric phase. In this case, domain wall motions are responsible for the sensitivity of the dielectric properties to the driving field and are very dissipative phenomena. In this paper, we evaluate, in the high-frequencies band, the ferroelectricity impact on the properties of BST thin films near the phase transition, by measuring the film's dielectric properties as a function of the incident RF power and for different temperatures.
Domaines
Electronique
Fichier principal
_pdf_archive_APPLAB_vol_112_iss_26_262901_1_am.pdf (535.47 Ko)
Télécharger le fichier
Origine | Fichiers produits par l'(les) auteur(s) |
---|
Loading...