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Communication Dans Un Congrès Année : 2008

Study of Latent Defects Induced by Swift Heavy Ion Irradiation on MOS Devices Gate Oxide

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Electronique
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hal-01822461 , version 1 (25-06-2018)

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  • HAL Id : hal-01822461 , version 1

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M. Marinoni, Antoine Touboul, D. Zander, C. Petit, A.M.J.F. Carvalho, et al.. Study of Latent Defects Induced by Swift Heavy Ion Irradiation on MOS Devices Gate Oxide. 45th IEEE Nuclear Space and Radiation Effects Conference, 2008, Tucson, United States. ⟨hal-01822461⟩
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