On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

This paper investigates on-wafer characterization of SiGe HBTs up to 500 GHz. Test structures for on-wafer thru-reflect-line (TRL) calibration have been designed and are presented. The TRL calibration method with silicon standards has first been benchmarked through electromagnetic simulation. Passive and active components are then characterized up to 500 GHz. The slight discontinuities between the frequency bands are explored. A specific focus was placed on incorrect horizontal probe positioning as well as on probe deformation, resulting in a better assessment of possible measurement errors.

Mots clés

Calibration de-embedding on wafer probe station SiGe heterojunction bipolar transistor (HBT) S-parameter measurement THz

Domaines

Micro et nanotechnologies/Microélectronique

Fichier principal

fregonese_2018_on-wafer.pdf (2.6 Mo)

Origine	Fichiers produits par l'(les) auteur(s)

sebastien fregonese : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01818021

Soumis le : mercredi 27 juin 2018-11:58:06

Dernière modification le : mercredi 15 novembre 2023-13:14:27

Archivage à long terme le : jeudi 27 septembre 2018-03:37:24

Dates et versions

hal-01818021 , version 1 (27-06-2018)

Identifiants

HAL Id : hal-01818021 , version 1
DOI : 10.1109/TMTT.2018.2832067

Citer

Sebastien Fregonese, Magali de Matos, Marina Deng, Manuel Potéreau, Cédric Ayela, et al.. On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands. IEEE Transactions on Microwave Theory and Techniques, 2018, 66 (7), pp.3332-3341. ⟨10.1109/TMTT.2018.2832067⟩. ⟨hal-01818021⟩

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