Morphological and structural evolutions of diluted Ge1−xMnx epitaxial films
Résumé
We investigate the structural and morphological evolutions of Ge1−xMnx films, grown by molecular beam epitaxy on Ge(100), as a function of Mn nominal concentration (x). We show that in our experimental growth conditions (growth temperature TG ∼ 160 °C), Mn atoms incorporated in the matrix increases with x up to a concentration m ∼ 0.03. Magnetic properties of the samples are mainly related to Ge3Mn5 cluster phase, while transport properties are connected to Ge:Mn matrix.