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Article Dans Une Revue Nanotechnology Année : 2014

Selective growth and ordering of SiGe nanowires for band gap engineering

Résumé

Selective growth and self-organization of silicon-germanium (SiGe) nanowires (NWs) on focused ion beam (FIB) patterned Si(111) substrates is reported. In its first step, the process involves the selective synthesis of Au catalysts in -free areas; its second step involves the preferential nucleation and growth of SiGe NWs on the catalysts. The selective synthesis process is based on a simple, room-temperature reduction of gold salts () in aqueous solution, which provides well-organized Au catalysts. By optimizing the reduction process, we are able to generate a bidimensional regular array of Au catalysts with self-limited sizes positioned in -free windows opened in a (111) substrate by FIB patterning. Such Au catalysts subsequently serve as preferential nucleation and growth sites of well-organized NWs. Furthermore, these NWs with tunable position and size exhibit the relevant features and bright luminescence that would find several applications in optoelectronic nanodevices.
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Dates et versions

hal-01811400 , version 1 (08-06-2018)

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Abdelmalek Benkouider, A. Ronda, A. Gouyé, C. Herrier, Luc Favre, et al.. Selective growth and ordering of SiGe nanowires for band gap engineering. Nanotechnology, 2014, 25 (33), pp.335303. ⟨10.1088/0957-4484/25/33/335303⟩. ⟨hal-01811400⟩
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