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Journal Articles Materials Letters Year : 2012

A New Approach for AFM Cantilever Elaboration with 3C-SiC

Abstract

The recent achievement of a continuous silicon monocrystalline thin film on 3C-SiC epilayers deposited on silicon substrates has opened the field for new microstructures. In this work, this original hetero-structure is the basis for the elaboration of an entire cantilever for atomic force microscopy. The hetero-epitaxially grown silicon layer is used to define the tip of the cantilever fabricated from the 3C-SiC epilayer deposited on silicon. The complete cantilever is elaborated by plasma etching using a nickel mask. The use of a full dry etching process is very promising as it is independent of the crystalline orientation of the silicon epilayer contrary to process based on wet etching solutions. Moreover, based on such hetero-structure, new MEMS devices can be considered.

Dates and versions

hal-01810915 , version 1 (08-06-2018)

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Sai Jiao, Jean-François Michaud, Marc Portail, A. Madouri, Thierry Chassagne, et al.. A New Approach for AFM Cantilever Elaboration with 3C-SiC. Materials Letters, 2012, 77, pp.54-56. ⟨10.1016/j.matlet.2012.02.128⟩. ⟨hal-01810915⟩
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