<?xml version="1.0" encoding="utf-8"?>
<TEI xmlns="http://www.tei-c.org/ns/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:hal="http://hal.archives-ouvertes.fr/" xmlns:gml="http://www.opengis.net/gml/3.3/" xmlns:gmlce="http://www.opengis.net/gml/3.3/ce" version="1.1" xsi:schemaLocation="http://www.tei-c.org/ns/1.0 http://api.archives-ouvertes.fr/documents/aofr-sword.xsd">
  <teiHeader>
    <fileDesc>
      <titleStmt>
        <title>HAL TEI export of hal-01810910</title>
      </titleStmt>
      <publicationStmt>
        <distributor>CCSD</distributor>
        <availability status="restricted">
          <licence target="https://creativecommons.org/publicdomain/zero/1.0/">CC0 1.0 - Universal</licence>
        </availability>
        <date when="2026-05-03T03:18:40+02:00"/>
      </publicationStmt>
      <sourceDesc>
        <p part="N">HAL API Platform</p>
      </sourceDesc>
    </fileDesc>
  </teiHeader>
  <text>
    <body>
      <listBibl>
        <biblFull>
          <titleStmt>
            <title xml:lang="en">Si Implanted Reactivation in GaN Grown on Sapphire Using AlN and Oxide Cap Layers</title>
            <author role="aut">
              <persName>
                <forename type="first">Frédéric</forename>
                <surname>Cayrel</surname>
              </persName>
              <email type="md5">24f7cf5072b28756b5f5f136cce6f62c</email>
              <email type="domain">univ-tours.fr</email>
              <idno type="idhal" notation="string">frederic-cayrel</idno>
              <idno type="idhal" notation="numeric">20970</idno>
              <idno type="halauthorid" notation="string">16277-20970</idno>
              <idno type="IDREF">https://www.idref.fr/094927898</idno>
              <affiliation ref="#struct-230940"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Anne-Elisabeth</forename>
                <surname>Bazin</surname>
              </persName>
              <idno type="halauthorid">1379387-0</idno>
              <affiliation ref="#struct-230940"/>
              <affiliation ref="#struct-302366"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Mohamed</forename>
                <surname>Lamhamdi</surname>
              </persName>
              <idno type="halauthorid">382224-0</idno>
              <affiliation ref="#struct-230940"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Y.</forename>
                <surname>Benchanaa</surname>
              </persName>
              <idno type="halauthorid">1379388-0</idno>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Olivier</forename>
                <surname>Ménard</surname>
              </persName>
              <idno type="idhal" notation="numeric">757413</idno>
              <idno type="halauthorid" notation="string">117489-757413</idno>
              <idno type="IDREF">https://www.idref.fr/112854370</idno>
              <affiliation ref="#struct-230940"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Arnaud</forename>
                <surname>Yvon</surname>
              </persName>
              <idno type="halauthorid">2542353-0</idno>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Emmanuel</forename>
                <surname>Collard</surname>
              </persName>
              <idno type="halauthorid">669478-0</idno>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Daniel</forename>
                <surname>Alquier</surname>
              </persName>
              <email type="md5">89f7dff13442afc22fafbef51f8cf1e7</email>
              <email type="domain">univ-tours.fr</email>
              <idno type="idhal" notation="string">daniel-alquier</idno>
              <idno type="idhal" notation="numeric">18459</idno>
              <idno type="halauthorid" notation="string">16278-18459</idno>
              <idno type="IDREF">https://www.idref.fr/128188308</idno>
              <idno type="ORCID">https://orcid.org/0000-0003-1345-8195</idno>
              <affiliation ref="#struct-230940"/>
            </author>
            <editor role="depositor">
              <persName>
                <forename>Christophe</forename>
                <surname>THIBAULT</surname>
              </persName>
              <email type="md5">52b3b3a3f40a619f9c736e2d72855488</email>
              <email type="domain">enssib.fr.invalid</email>
            </editor>
          </titleStmt>
          <editionStmt>
            <edition n="v1" type="current">
              <date type="whenSubmitted">2018-06-08 12:33:33</date>
              <date type="whenModified">2026-03-19 16:48:02</date>
              <date type="whenReleased">2018-06-08 12:33:33</date>
              <date type="whenProduced">2012-02</date>
              <ref type="externalLink" target="https://api.istex.fr/ark:/67375/6H6-LDS84ZV8-Z/fulltext.pdf?sid=hal"/>
            </edition>
            <respStmt>
              <resp>contributor</resp>
              <name key="588013">
                <persName>
                  <forename>Christophe</forename>
                  <surname>THIBAULT</surname>
                </persName>
                <email type="md5">52b3b3a3f40a619f9c736e2d72855488</email>
                <email type="domain">enssib.fr.invalid</email>
              </name>
            </respStmt>
          </editionStmt>
          <publicationStmt>
            <distributor>CCSD</distributor>
            <idno type="halId">hal-01810910</idno>
            <idno type="halUri">https://hal.science/hal-01810910</idno>
            <idno type="halBibtex">cayrel:hal-01810910</idno>
            <idno type="halRefHtml">&lt;i&gt;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms&lt;/i&gt;, 2012, 272, pp.137-140. &lt;a target="_blank" href="https://dx.doi.org/10.1016/j.nimb.2011.01.050"&gt;&amp;#x27E8;10.1016/j.nimb.2011.01.050&amp;#x27E9;&lt;/a&gt;</idno>
            <idno type="halRef">Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 272, pp.137-140. &amp;#x27E8;10.1016/j.nimb.2011.01.050&amp;#x27E9;</idno>
            <availability status="restricted"/>
          </publicationStmt>
          <seriesStmt>
            <idno type="stamp" n="UNIV-TOURS">Université François Rabelais</idno>
            <idno type="stamp" n="CNRS">CNRS - Centre national de la recherche scientifique</idno>
            <idno type="stamp" n="GREMAN">Groupe de Recherche en Electronique, Matériaux, Acoustique et Nanotechnologies </idno>
            <idno type="stamp" n="INSA-GROUPE">Groupe INSA</idno>
            <idno type="stamp" n="INSA-CVL">INSA CENTRE VAL DE LOIRE</idno>
            <idno type="stamp" n="TEST3-HALCNRS">TEST3-HALCNRS</idno>
          </seriesStmt>
          <notesStmt>
            <note type="audience" n="2">International</note>
            <note type="popular" n="0">No</note>
            <note type="peer" n="1">Yes</note>
          </notesStmt>
          <sourceDesc>
            <biblStruct>
              <analytic>
                <title xml:lang="en">Si Implanted Reactivation in GaN Grown on Sapphire Using AlN and Oxide Cap Layers</title>
                <author role="aut">
                  <persName>
                    <forename type="first">Frédéric</forename>
                    <surname>Cayrel</surname>
                  </persName>
                  <email type="md5">24f7cf5072b28756b5f5f136cce6f62c</email>
                  <email type="domain">univ-tours.fr</email>
                  <idno type="idhal" notation="string">frederic-cayrel</idno>
                  <idno type="idhal" notation="numeric">20970</idno>
                  <idno type="halauthorid" notation="string">16277-20970</idno>
                  <idno type="IDREF">https://www.idref.fr/094927898</idno>
                  <affiliation ref="#struct-230940"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Anne-Elisabeth</forename>
                    <surname>Bazin</surname>
                  </persName>
                  <idno type="halauthorid">1379387-0</idno>
                  <affiliation ref="#struct-230940"/>
                  <affiliation ref="#struct-302366"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Mohamed</forename>
                    <surname>Lamhamdi</surname>
                  </persName>
                  <idno type="halauthorid">382224-0</idno>
                  <affiliation ref="#struct-230940"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Y.</forename>
                    <surname>Benchanaa</surname>
                  </persName>
                  <idno type="halauthorid">1379388-0</idno>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Olivier</forename>
                    <surname>Ménard</surname>
                  </persName>
                  <idno type="idhal" notation="numeric">757413</idno>
                  <idno type="halauthorid" notation="string">117489-757413</idno>
                  <idno type="IDREF">https://www.idref.fr/112854370</idno>
                  <affiliation ref="#struct-230940"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Arnaud</forename>
                    <surname>Yvon</surname>
                  </persName>
                  <idno type="halauthorid">2542353-0</idno>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Emmanuel</forename>
                    <surname>Collard</surname>
                  </persName>
                  <idno type="halauthorid">669478-0</idno>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Daniel</forename>
                    <surname>Alquier</surname>
                  </persName>
                  <email type="md5">89f7dff13442afc22fafbef51f8cf1e7</email>
                  <email type="domain">univ-tours.fr</email>
                  <idno type="idhal" notation="string">daniel-alquier</idno>
                  <idno type="idhal" notation="numeric">18459</idno>
                  <idno type="halauthorid" notation="string">16278-18459</idno>
                  <idno type="IDREF">https://www.idref.fr/128188308</idno>
                  <idno type="ORCID">https://orcid.org/0000-0003-1345-8195</idno>
                  <affiliation ref="#struct-230940"/>
                </author>
              </analytic>
              <monogr>
                <idno type="halJournalId" status="VALID">17526</idno>
                <idno type="issn">0168-583X</idno>
                <idno type="eissn">1872-9584</idno>
                <title level="j">Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</title>
                <imprint>
                  <publisher>Elsevier</publisher>
                  <biblScope unit="volume">272</biblScope>
                  <biblScope unit="pp">137-140</biblScope>
                  <date type="datePub">2012-02</date>
                </imprint>
              </monogr>
              <idno type="doi">10.1016/j.nimb.2011.01.050</idno>
            </biblStruct>
          </sourceDesc>
          <profileDesc>
            <langUsage>
              <language ident="en">English</language>
            </langUsage>
            <textClass>
              <classCode scheme="halDomain" n="spi.nano">Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics</classCode>
              <classCode scheme="halTypology" n="ART">Journal articles</classCode>
              <classCode scheme="halOldTypology" n="ART">Journal articles</classCode>
              <classCode scheme="halTreeTypology" n="ART">Journal articles</classCode>
            </textClass>
            <abstract xml:lang="en">
              <p>Gallium nitride (GaN) is a promising material for power electronic devices. Due to GaN sensitivity to high temperature treatments, dopant activation, after ion implant, is one of the major critical steps to be overcome. An annealing cap layer is then mandatory during high temperature treatment to avoid degradations. In this work, cap layers, such as AlN and SiOx, were deposited on Si-implanted N-type GaN. Samples were annealed using both classical (FA) and rapid thermal (RTA) annealing for times ranging from 30 s to 8 h and temperatures from 1000 to 1150 °C. Transmission Electron Microscopy has been done to observe the implanted layer structure. After cap layer removal, samples surface has been investigated through Atomic Force Microscopy measurements. Dopant activity was indirectly evaluated by Speciﬁc Contact Resistance (SCR) measurements. This work demonstrates that low SCR value (8.2 Â 10À5 X cm2) with low surface roughness ($1 nm) can be reached using RTA and an oxide cap layer. However, presence of hexagonal pits in GaN layer is difﬁcult to avoid. Compromise between low SCR with low roughness value and low hexagonal pits density on the GaN surface must be found.</p>
            </abstract>
          </profileDesc>
        </biblFull>
      </listBibl>
    </body>
    <back>
      <listOrg type="structures">
        <org type="laboratory" xml:id="struct-230940" status="VALID">
          <idno type="IdRef">228797675</idno>
          <idno type="RNSR">201220242E</idno>
          <idno type="ROR">https://ror.org/051qnm298</idno>
          <orgName>GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)</orgName>
          <orgName type="acronym">GREMAN</orgName>
          <date type="start">2012-01-01</date>
          <desc>
            <address>
              <addrLine>Bât. E, 20 avenue Monge, 37200 Tours</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://greman.univ-tours.fr</ref>
          </desc>
          <listRelation>
            <relation active="#struct-300298" type="direct"/>
            <relation active="#struct-303079" type="direct"/>
            <relation active="#struct-301232" type="indirect"/>
            <relation name="UMR7347" active="#struct-441569" type="direct"/>
          </listRelation>
        </org>
        <org type="institution" xml:id="struct-302366" status="VALID">
          <orgName>STMicroelectronics [Tours]</orgName>
          <orgName type="acronym">ST-TOURS</orgName>
          <desc>
            <address>
              <addrLine>10 rue Thalès de Milet, 37071 Tours Cedex 2</addrLine>
              <country key="FR"/>
            </address>
          </desc>
        </org>
        <org type="institution" xml:id="struct-300298" status="VALID">
          <idno type="IdRef">026404478</idno>
          <idno type="ISNI">0000000121608742</idno>
          <idno type="ROR">https://ror.org/02wwzvj46</idno>
          <orgName>Université de Tours</orgName>
          <orgName type="acronym">UT</orgName>
          <date type="start">1970-12-17</date>
          <desc>
            <address>
              <addrLine>60 rue du Plat d'Étain, 37020 Tours cedex 1</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.univ-tours.fr</ref>
          </desc>
        </org>
        <org type="institution" xml:id="struct-303079" status="VALID">
          <idno type="IdRef">203592077</idno>
          <orgName>Institut National des Sciences Appliquées - Centre Val de Loire</orgName>
          <orgName type="acronym">INSA CVL</orgName>
          <date type="start">2014-01-01</date>
          <desc>
            <address>
              <addrLine>88 boulevard Lahitolle, CS 60013, 18022 Bourges cedex</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.insa-centrevaldeloire.fr/fr/</ref>
          </desc>
          <listRelation>
            <relation active="#struct-301232" type="direct"/>
          </listRelation>
        </org>
        <org type="regroupinstitution" xml:id="struct-301232" status="VALID">
          <idno type="IdRef">162105150</idno>
          <orgName>Institut National des Sciences Appliquées</orgName>
          <orgName type="acronym">INSA</orgName>
          <desc>
            <address>
              <country key="FR"/>
            </address>
          </desc>
        </org>
        <org type="regroupinstitution" xml:id="struct-441569" status="VALID">
          <idno type="IdRef">02636817X</idno>
          <idno type="ISNI">0000000122597504</idno>
          <idno type="ROR">https://ror.org/02feahw73</idno>
          <orgName>Centre National de la Recherche Scientifique</orgName>
          <orgName type="acronym">CNRS</orgName>
          <date type="start">1939-10-19</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.cnrs.fr/</ref>
          </desc>
        </org>
      </listOrg>
    </back>
  </text>
</TEI>