Recent Progresses in GaN Power Rectifier
Résumé
In this work, both “Schottky to Schottky” structure (STS) and pseudo-vertical Schottky barrier diode
(pv-SBD) have been processed on GaN heteroepitaxially grown on sapphire or silicon by metal organic
chemical vapor deposition (MOCVD) and characterized physically and electrically. Ni and Ti/Al were
used to obtain respectively Schottky and Ohmic contacts using rapid thermal annealing (RTA).
Adequate passivation steps and insertion of a resistive guard ring were also implemented in pv-SBD.
The STS results, presented in this paper, evidence the impact of the substrate on the growth as well
as all the progresses that have been done on GaN material quality. Furthermore, we demonstrate that
high quality Schottky diodes can be obtained on GaN grown on sapphire by MOCVD. Indeed, ideality
factors of 1.09 as well as a barrier height of 1.06 eV were obtained on pv-SBD devices that have a
breakdown voltage over 600 V.