Non-Oxidized Porous Silicon-Based Power AC Switch Peripheries - Archive ouverte HAL
Article Dans Une Revue Nanoscale Research Letters Année : 2012

Non-Oxidized Porous Silicon-Based Power AC Switch Peripheries

Résumé

We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries.

Dates et versions

hal-01810908 , version 1 (08-06-2018)

Identifiants

Citer

Samuel Menard, Angélique Fèvre, Damien Valente, Jérôme Billoue, Gaël Gautier. Non-Oxidized Porous Silicon-Based Power AC Switch Peripheries. Nanoscale Research Letters, 2012, 7 (1), pp.566-576. ⟨10.1186/1556-276X-7-566⟩. ⟨hal-01810908⟩
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