Small geometry effects have become increasingly important in analog circuits as transistors continue to shrink. As a result, transconductance-to-drain current (gm/ID) transistor parameters are no longer width-independent. In this brief, a procedure to develop “unit-sized” transistors with minimal sensitivity to small geometry effects is proposed. It is shown that by using the “unit-sized” transistors, the impact of small geometry effects on gm/ID dependent parameters such as current density and self gain can be reduced to 3.6 percent and 1.5 percent respectively.