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Article Dans Une Revue IEEE Transactions on Circuits and Systems II: Express Briefs Année : 2019

Implications of Small Geometry Effects on gm/ID Based Design Methodology for Analog Circuits

Résumé

Small geometry effects have become increasingly important in analog circuits as transistors continue to shrink. As a result, transconductance-to-drain current (gm/ID) transistor parameters are no longer width-independent. In this brief, a procedure to develop “unit-sized” transistors with minimal sensitivity to small geometry effects is proposed. It is shown that by using the “unit-sized” transistors, the impact of small geometry effects on gm/ID dependent parameters such as current density and self gain can be reduced to 3.6 percent and 1.5 percent respectively.
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Dates et versions

hal-01809251 , version 1 (05-10-2022)

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Jack Ou, Pietro Maris Ferreira. Implications of Small Geometry Effects on gm/ID Based Design Methodology for Analog Circuits. IEEE Transactions on Circuits and Systems II: Express Briefs, 2019, 66 (1), pp.81 - 85. ⟨10.1109/TCSII.2018.2846484⟩. ⟨hal-01809251⟩
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