Direct observation of NiSi lateral growth at the epitaxial θ-Ni<inf>2</inf>Si/Si(1 0 0) interface - Archive ouverte HAL
Article Dans Une Revue Acta Materialia Année : 2015

Direct observation of NiSi lateral growth at the epitaxial θ-Ni2Si/Si(1 0 0) interface

Résumé

The first stages of NiSi phase formation at the expense of θ-Ni2Si and a Si substrate are investigated by transmission electron microscopy (TEM). These measurements show the presence of a low density of NiSi particles at the θ-Ni2Si/Si(1 0 0) interface and allow their complete shape to be determined. This stage corresponds to the lateral growth of NiSi at the epitaxial θ-Ni2Si/Si(1 0 0) interface. The shape of these particles is in agreement with the predicted models, and the shapes were fitted by an analytical expression derived from the model developed by Klinger et al. © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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Dates et versions

hal-01804752 , version 1 (01-06-2018)

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M. El Kousseifi, K. Hoummada, T. Epicier, Dominique Mangelinck. Direct observation of NiSi lateral growth at the epitaxial θ-Ni2Si/Si(1 0 0) interface. Acta Materialia, 2015, 99, pp.1-6. ⟨10.1016/j.actamat.2015.07.062⟩. ⟨hal-01804752⟩
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