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Article Dans Une Revue Solid-State Electronics Année : 2011

Investigation of charge-trap memories with AlN based band engineered storage layers

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hal-01804675 , version 1 (01-06-2018)

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Gabriel Molas, J.P. Colonna, R. Kies, D. Belhachemi, Marc Bocquet, et al.. Investigation of charge-trap memories with AlN based band engineered storage layers. Solid-State Electronics, 2011, 58 (1), pp.68 - 74. ⟨10.1016/j.sse.2010.11.030⟩. ⟨hal-01804675⟩
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