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Conference Papers Year : 2005

N-type multicrystalline silicon wafers for solar cells


In n-type silicon the capture cross sections of metallic impurities, are neatly smaller than in p-type. So, lifetime and also diffusion length of minority carriers should be neatly higher. This is of a paramount interest for multicrystalline silicon wafers, in which the impurity-defects interaction governs the recombination strength of minority carriers. In 1.2 Omega cm wafer, lifetime is found around 200 mu s and diffusion lengths around 220 mu m. These values increase strongly after gettering treatments like phosphorus diffusion or AI-Si alloying. Scan maps reveal that extended defects are poorly active, even when the density of dislocation is higher than 105 cm(2). High quality abrupt p(+)n junctions are obtained by Al-Si alloying and annealing at 850 or 900 degrees C, which could be used for rear junction cells.
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hal-01802921 , version 1 (29-05-2018)



S Martinuzzi, Olivier Palais, M Pasquinelli, Damien Barakel, F Ferrazza. N-type multicrystalline silicon wafers for solar cells. Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005, 2005, Unknown, Unknown Region. pp.919-922, ⟨10.1109/PVSC.2005.1488281⟩. ⟨hal-01802921⟩
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