Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K - Archive ouverte HAL Access content directly
Journal Articles Acta Physica Polonica A Year : 2011

Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K

Abstract

We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 µs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.

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Electronics
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hal-01801105 , version 1 (21-12-2018)

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T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, et al.. Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K. Acta Physica Polonica A, 2011, 119 (2), pp.196 - 198. ⟨10.12693/APhysPolA.119.196⟩. ⟨hal-01801105⟩
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