Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 µm - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 1999

Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 µm

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hal-01793950 , version 1 (17-05-2018)

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  • HAL Id : hal-01793950 , version 1

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A. Vicet, J.-C. Nicolas, F. Genty, Y. Rouillard, E.M. Skouri, et al.. Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 µm. Mid-IR Optoelectronics: Materials and Devices (MIOMD), 1999, Aachen, Germany. ⟨hal-01793950⟩
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