All-Dielectric Color Filters Using SiGe-Based Mie Resonator Arrays
Résumé
Dielectric Mie resonators have attracted a great deal of attention over the past few years thanks to their remarkable capabilities in manipulating light propagation at the nanoscale. However, the practical implementation of technological products is still elusive. One of the important limits is the absence of a high-performing material and a fabrication method that can be easily integrated into modern microelectronic devices at affordable costs. Here, we provide theoretical and experimental evidence of an alternative semiconductor material, SiGe alloys, for dielectric Mie resonator applications. As a material compatible with the processing requirements of the semiconductor industry, it possesses comparable optical properties to its conventional Si-based counterpart at visible frequencies in spite of its higher optical losses. These dielectric resonant 18 particles can be obtained over very large surfaces on arbitrary silica substrates via spontaneous solid state dewetting of ultrathin (<100 nm) SiGe amorphous layers. Furthermore, the polycrystalline SiGe islands can be precisely organized in uniform arrays featuring low size dispersion. As an example, we demonstrate SiGe-based Mie resonator arrays functioning as color pass-band filters across the full visible spectral range. The filters function both in transmission and diffusion and are fabricated using a 22 methodology compatible with C-MOS fabrication.
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Mie Resonator Filters Paper-ACSPhotonics-resoumission2-27022017.pdf (1.44 Mo)
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