Analysis of the Results of Accelerated Aging Tests in Insulated Gate Bipolar Transistors - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Power Electronics Année : 2016

Dates et versions

hal-01786960 , version 1 (07-05-2018)

Identifiants

Citer

Daniel Astigarraga, Federico Martin Ibanez, Ainhoa Galarza, Jose Martin Echeverria, Inigo Unanue, et al.. Analysis of the Results of Accelerated Aging Tests in Insulated Gate Bipolar Transistors. IEEE Transactions on Power Electronics, 2016, 31 (11), pp.7953 - 7962. ⟨10.1109/TPEL.2015.2512923⟩. ⟨hal-01786960⟩
62 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More