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Article Dans Une Revue Applied Materials Today Année : 2017

Invisible electronics: Metastable Cu-vacancies chain defects for highly conductive p-type transparent oxide

Résumé

Non-stoichiometric copper chromium delafossite has lately attracted a high interest in the community of oxide materials due to its high p-type electrical conductivity and adequate transparency in the visible range. This study reports record electrical conductivity of Cu0.66Cr1.33O2 thin films deposited by chemical vapour deposition and investigates their properties. As-deposited samples show conductivities greater than 100 S cm−1 and carrier concentrations around 1021 cm−3, highest reported value for any non-intrinsically doped delafossite system. A new structural defect consisting in Cu-vacancies chains is identified. This defect, never observed or presumed before, heals upon annealing at 900 °C under argon environment, resulting in an electrical conductivity's reduction of six orders of magnitude. Through a wide-range of structural, chemical and transport measurement techniques, a structure-defect-property correlation of this system is established and the metastability of the non-stoichiometry induced defects is investigated. The possibility of manipulating the defects and carrier concentrations through high-temperature annealing and the outstanding electrical properties associated with the large-scale deposition technique and moderate deposition temperature could be of great technological interest. This material could find important applications as hole injection or extraction layer in all-oxide photovoltaic and light emitting devices.
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Dates et versions

hal-01781591 , version 1 (30-04-2018)

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Petru Lunca Popa, Jonathan Crêpellière, Pavan Nukala, Renaud Leturcq, Damien Lenoble. Invisible electronics: Metastable Cu-vacancies chain defects for highly conductive p-type transparent oxide. Applied Materials Today, 2017, 9, pp.184 - 191. ⟨10.1016/j.apmt.2017.07.004⟩. ⟨hal-01781591⟩
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