Electrical properties and non-volatile memory effect of the [Fe(HB(pz) 3 ) 2 ] spin crossover complex integrated in a microelectrode device - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2011

Electrical properties and non-volatile memory effect of the [Fe(HB(pz) 3 ) 2 ] spin crossover complex integrated in a microelectrode device

Abstract

We report on the deposition of thin films of the [Fe(HB(pz)3)2] (pz = pyrazolyl) molecular spin crossover complex by thermal evaporation. By means of impedance measurements and Raman microspectroscopy, we show that the films maintain the structure and properties of the bulk material. The conductivity of the films decreases by ca. 2 orders of magnitude when the freshly deposited compound goes through a first (irreversible) thermal phase change above ca. 380 K. This property can be exploited as a non-volatile (read-only) memory effect.
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Dates and versions

hal-01767507 , version 1 (25-06-2019)

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Tarik Mahfoud, Gábor Molnár, Saioa Cobo, Lionel Salmon, Christophe Thibault, et al.. Electrical properties and non-volatile memory effect of the [Fe(HB(pz) 3 ) 2 ] spin crossover complex integrated in a microelectrode device. Applied Physics Letters, 2011, 99 (5), pp.053307-1-053307-3. ⟨10.1063/1.3616147⟩. ⟨hal-01767507⟩
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