Photoluminescence enhancement of a silicon nanocrystal plane positioned in the nearfield of a silicon nanowire
Résumé
Semiconductor nanowires have an excellent ability to trap, guide, scatter or absorb light thanks to the presence of specific resonant optical modes. The electromagnetic field-enhancement associated to such effects can be used to modify the luminescence of emitters positioned in the vicinity of the nanowire, as to plasmonic nanoantennas. We show that the photoluminescence of silicon nanocrystals embedded in silica can be enhanced by a factor of about 3 in the presence of a silicon nanowire on the silica surface. This could be the basis of a promising CMOS-compatible process to improve silicon-based light emitting devices. 2D maps of the nanocrystal photoluminescence exhibit different behaviors as function of laser polarization and can be related to the electric field intensity distribution in the nanowire near-field, where the Si-NCs layer is located. Preliminary results of nonlinear optics for imaging the local electric field are presented.
Mots clés
Electric-field intensity distribution
Silica
Photoluminescence
Optical waveguides
Nonlinear optics
Nanowires
Nanocrystals
Metamaterial antennas
Luminescence
Light emission
Light
Electromagnetic fields
Electromagnetic field effects
Electric fields
Electromagnetic field enhancement
Laser polarization
Light emitting devices
Local electric field
Photoluminescence enhancement
Semiconductor nanowire
Silicon nanocrystals
Silicon