Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy
Résumé
We have studied the boron B diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy depth analysis. A large concentration of B B/Mg=0.16 was found to diffuse into the MgO barrier after 350 °C annealing. The boron in MgO is in a highly oxidized B3+ state and is homogenously distributed in the whole barrier. The important B diffusion in MgO could be related to the CoFeB crystallization process which begins from the under CoFeB/Ru interface and pushes boron atoms to diffuse into the MgO barrier during annealing.
| Origine | Fichiers éditeurs autorisés sur une archive ouverte |
|---|---|
| Licence |