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Communication Dans Un Congrès Année : 2003

Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier Double-Gate MOSFET's

Résumé

Transport properties of single conduction channel Schottky barrier Double-Gate MOSFET's have been investigated by self-consistently solving the two-dimensional Poisson equation with the Schrodinger equation, expressed in tight-binding using the Green's function formalism. In this atomic-scale approach, the source-channel-drain axis of the transistor has been modeled by an atomic linear chain sandwiched between two silicon oxides and gate electrodes. The dependence of source-to-drain tunneling with channel length and gate electrode workfunction as well as its impact on device characteristics have been carefully investigated. The results show that source-to-drain tunneling does set an ultimate scaling limit well below 10 nm.
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Dates et versions

hal-01759526 , version 1 (05-04-2018)

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M Bescond, Jean-Luc Autran, Daniela Munteanu, N Cavassilas, M Lannoo. Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier Double-Gate MOSFET's. ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, Unknown, Unknown Region. pp.395-398, ⟨10.1109/ESSDERC.2003.1256897⟩. ⟨hal-01759526⟩
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