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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2005

Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations

Résumé

The sensitivity to heavy ions of a 0.25 mu m fully-depleted SOI n-channel transistor is evaluated by numerical simulation. The variation of the bipolar gain versus LET and particle location in the structure is thoroughly investigated.
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hal-01759457 , version 1 (05-04-2018)

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K Castellani-Coulie, Daniela Munteanu, V Ferlet-Cavrois, Jean-Luc Autran. Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations. IEEE Transactions on Nuclear Science, 2005, 52 (5, 2), pp.1474-1479. ⟨10.1109/TNS.2005.855810⟩. ⟨hal-01759457⟩
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