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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2006

Investigation of 30 nm gate-all-around MOSFET sensitivity to heavy ions: A 3-D simulation study

Résumé

Three-dimensional (3-D) numerical simulations of decananometer Gate-All-Around transistors with 30 nm channel length and 10 mn Silicon film thickness have been performed to deeply investigate their electrical response to heavy ions irradiation. Results show that these GAA devices exhibit an excellent control of both impact ionization and bipolar amplification. A careful comparison between two-dimensional (2-D) and 3-D simulations is also reported to explore the limits of the 2-D approach for such ultra-deep submicrometer multi-gate device architectures.
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hal-01759447 , version 1 (05-04-2018)

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K. Castellani-Coulie, Daniela Munteanu, Jean-Luc Autran, V. Ferlet-Cavrois, P. Paillet, et al.. Investigation of 30 nm gate-all-around MOSFET sensitivity to heavy ions: A 3-D simulation study. IEEE Transactions on Nuclear Science, 2006, 53 (4, 1), pp.1950-1958. ⟨10.1109/TNS.2006.880945⟩. ⟨hal-01759447⟩
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