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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2007

3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs

Résumé

The impact of quantum confinement effects on the transient response of 32 nm Multiple-Gate nanowire MOSFETs to heavy ion irradiation is investigated using 3D quantum numerical simulation. The drain current transient induced by an ion strike and the bipolar amplification of Double-Gate, Triple-Gate, Omega-Gate and Gate-All-Around architectures is simulated for the 2007, 2009 and 2011 ITRS Low Power technology nodes. The consequences of quantum-mechanical confinement on single-event transient immunity when devices are scaled down to 20 nm gate length and 5 mn thick silicon channel are then analyzed.
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hal-01759444 , version 1 (05-04-2018)

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Daniela Munteanu, Jean-Luc Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio, et al.. 3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs. IEEE Transactions on Nuclear Science, 2007, 54 (4, 2), pp.994-1001. ⟨10.1109/TNS.2007.892284⟩. ⟨hal-01759444⟩
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