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Communication Dans Un Congrès Année : 2008

Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs

Résumé

We present an analytical model for the subthreshold characteristic of ultra-thin Independent Double-Gate transistors working in the ballistic regime. This model takes into account short-channel effects, quantization effects and source-to-drain tunneling (WKB approximation) in the expression of the subthreshold drain current. Important device parameters, such as off-state current or subthreshold swing, can be easily evaluated through this full analytical approach. The model can be successfuly implemented in a TCAD circuit simulator for the simulation of IDG MOSFET based-circuits.
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Dates et versions

hal-01759433 , version 1 (05-04-2018)

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  • HAL Id : hal-01759433 , version 1

Citer

Daniela Munteanu, M. Moreau, Jean-Luc Autran. Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs. NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, Unknown, Unknown Region. pp.877+. ⟨hal-01759433⟩
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